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| IPB60R299CP CoolMOSTM Power Transistor Features * Lowest figure-of-merit R ONxQg * Ultra low gate charge * Extreme dv/dt rated * High peak current capability * Qualified according to JEDEC1) for target applications * Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.299 22 nC PG-TO263 CoolMOS CP is designed for: Hard switching SMPS topologies Type IPB60R299CP Package PG-TO263 Marking 6R299P Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 C T C=100 C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv /dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv /dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Rev. 2.0 P tot T j, T stg M3 and M3.5 screws page 1 T C=25 C T C=25 C I D=4.4 A, V DD=50 V I D=4.4 A, V DD=50 V Value 11 7 34 290 0.44 mJ Unit A 4.4 50 20 30 96 -55 ... 150 60 A V/ns V W C Ncm 2007-11-22 IPB60R299CP Maximum ratings, at T j=25 C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 C Value 6.6 34 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6 cm2 cooling area3) T sold reflow MSL 1 1.3 62 K/W - 35 - Soldering temperature, reflowsoldering - - 260 C Electrical characteristics, at T j=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=250 A V GS(th) V DS=V GS, I D=0,44 mA V DS=600 V, V GS=0 V, T j=25 C V DS=600 V, V GS=0 V, T j=150 C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=6.6 A, T j=25 C V GS=10 V, I D=6.6 A, T j=150 C Gate resistance Rev. 2.0 RG f =1 MHz, open drain page 2 600 2.5 3 3.5 V Zero gate voltage drain current I DSS - - 1 A - 10 0.27 100 0.299 nA - 0.73 1.9 2007-11-22 IPB60R299CP Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Effective output capacitance, energy related5) Effective output capacitance, time related6) Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current 1) Values typ. max. Unit C iss C oss C o(er) C o(tr) t d(on) tr t d(off) tf V GS=0 V, V DS=100 V, f =1 MHz - 1100 60 46 120 10 5 40 5 - pF V GS=0 V, V DS=0 V to 480 V ns V DD=400 V, V GS=10 V, I D=6.6 A, R G=4.3 - Q gs Q gd Qg V plateau V DD=400 V, I D=6.6 A, V GS=0 to 10 V - 5 7.6 22 5.0 29 - nC V V SD t rr Q rr I rrm V GS=0 V, I F=6.6 A, T j=25 C - 0.9 300 3.9 26 1.2 - V ns C A V R=400 V, I F=I S, di F/dt =100 A/s - J-STD20 and JESD22 Pulse width t p limited by T j,max Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. ISDID, di/dt200A/s, VDClink=400V, Vpeak 3) 4) 5) 6) Rev. 2.0 page 3 2007-11-22 IPB60R299CP 1 Power dissipation P tot=f(T C) 2 Safe operating area I D=f(V DS); T C=25 C; D =0 parameter: t p 100 102 limited by on-state resistance 1 s 75 10 1 10 s 100 s P tot [W] 50 I D [A] 1 ms DC 100 25 10 ms 0 0 40 80 120 160 10-1 100 101 102 103 T C [C] V DS [V] 3 Max. transient thermal impedance Z thJC=f(t P) parameter: D=t p/T 101 4 Typ. output characteristics I D=f(V DS); T j=25 C parameter: V GS 45 10V 12 V 20 V 100 0.5 30 8V Z thJC [K/W] 0.2 0.1 0.05 I D [A] 6V 10-1 0.02 0.01 15 5.5 V single pulse 5V 4.5 V 10-2 10-5 10-4 10-3 10-2 10-1 100 0 0 5 10 15 20 t p [s] V DS [V] Rev. 2.0 page 4 2007-11-22 IPB60R299CP 5 Typ. output characteristics I D=f(V DS); T j=150 C parameter: V GS 25 6 Typ. drain-source on-state resistance R DS(on)=f(I D); T j=150 C parameter: V GS 1.8 1.6 20 10 V 8V 20 V 12 V 6V 5V 5.5 V 6V 7V 1.4 6.5 V 1.2 5.5 V 10 V R DS(on) [] 5V 4.5 V 15 I D [A] 1 0.8 0.6 0.4 0.2 10 5 0 0 5 10 15 20 0 0 5 10 15 20 25 V DS [V] I D [A] 7 Drain-source on-state resistance R DS(on)=f(T j); I D=6.6 A; V GS=10 V 8 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 1 50 0.8 40 C 25 R DS(on) [] 0.6 30 I D [A] 0.4 98 % typ 20 C 150 0.2 10 0 -60 -20 20 60 100 140 180 0 0 2 4 6 8 10 T j [C] V GS [V] Rev. 2.0 page 5 2007-11-22 IPB60R299CP 9 Typ. gate charge V GS=f(Q gate); I D=6.6 A pulsed parameter: V DD 10 9 8 7 6 25 C, 98% 10 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 102 120 V 400 V 101 150 C 150 C, 98% 25 C V GS [V] 5 4 3 2 1 0 0 5 10 15 20 25 I F [A] 100 10-1 0 0.5 1 1.5 2 Q gate [nC] V SD [V] 11 Avalanche energy E AS=f(T j); I D=4.4 A; V DD=50 V 12 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=0.25 mA 300 700 660 200 V BR(DSS) [V] 100 0 20 60 100 140 180 E AS [mJ] 620 580 540 -60 -20 20 60 100 140 180 T j [C] T j [C] Rev. 2.0 page 6 2007-11-22 IPB60R299CP 13 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 14 Typ. Coss stored energy E oss= f(V DS) 105 8 104 6 Ciss 103 E oss [J] Coss Crss C [pF] 4 102 2 101 100 0 100 200 300 400 500 0 0 100 200 300 400 500 600 V DS [V] V DS [V] Rev. 2.0 page 7 2007-11-22 IPB60R299CP Definition of diode switching characteristics Rev. 2.0 page 8 2007-11-22 IPB60R299CP PG-TO263-3-2/TO263-3-5/TO263-3-22: Outlines Rev. 2.0 page 9 2007-11-22 IPB60R299CP Published by Infineon Technologies AG 81726 Munich, Germany (c) 2007 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.0 page 10 2007-11-22 |
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